In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments

Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.