Radiation-sensitive resin composition, method for forming resist pattern and photoresist film

Disclosed is a radiation-sensitive resin composition which hardly dissolves into a liquid for immersion exposure with which the resin composition comes in contact during a liquid immersion exposure, and has a large receding contact angle with the liquid for immersion exposure.  The radiation-sensitive resin composition can form a resist film which is capable of highly precisely forming a fine resist pattern having less development defects.  The radiation-sensitive resin composition is used for formation of a resist film in a method for forming a resist pattern which comprises an immersion exposure step, and contains a resin component, an acid generator and a solvent.  The resin component contains a resin (A1) which contains a repeating unit (a1) having a fluorine atom and an acid-cleavable group in a side chain.  The resin composition is characterized in that the value of K 1 defined by the following formula: K 1 = F 1 /F 2 (wherein F 1 represents the fluorine content ratio in the outermost surface portion of the resist film, and F 2 represents the fluorine content ratio in the portion from the outermost surface to the position around 20% of the thickness of the resist film) satisfies the following formula: 1 ≤ K 1 ≤ 5.