Fabrication of the p-MgZnO/ZnO/n-MgZnO double-heterojunction by MOCVD

The p-MgZnO/i-ZnO/n-MgZnO double-heterojuntion was fabricated on GaAs (100) substrate by photon-assistant metal-organic chemical vapor deposition. We can found an obvious ultraviolet peak in the electroluminescence spectra and the causation has been discussed. The effects of the thickness of ZnO interlayer on the junctions properties was also analyzed. The conclusion indicated the intensity of the UV peak would increase by decreasing the thickness of ZnO interlayer. The thickness of ZnO layer had important impact on the optical qualities of the double-heterojunction.