Photonic BiCMOS technology — Enabler for Si-based, monolithically integrated transceivers towards 400 Gbps

Stefan Lischke,D. Knoll,Lars Zimmermann,Pedro Rito,Ahmet Cagri Ulusoy,Ahmet Awny,Despoina Petousi,Iria Garcia Lopez,Christian Mai,Marcel Kroh,Bernd Heinemann,Holger Rücker,R. Barth,Jens Katzer,Markus Andreas Schubert,Mehmet Kaynak,Andreas Mai

Photonic BiCMOS technology — Enabler for Si-based, monolithically integrated transceivers towards 400 Gbps

2016

Stefan Lischke
D. Knoll
Lars Zimmermann
Pedro Rito
Ahmet Cagri Ulusoy
Ahmet Awny
Despoina Petousi
Iria Garcia Lopez
Christian Mai
Marcel Kroh
Bernd Heinemann
Holger Rücker
R. Barth
Jens Katzer
Markus Andreas Schubert
Mehmet Kaynak
Andreas Mai

We present a photonic BiCMOS process enabling for monolithically integrated Si-based transceiver front-ends towards single-wavelength 400 Gb/s data rate by combining segmented Mach-Zehnder-Interferometer modulators and high-speed germanium photo detectors with high-performance electronics.

Keywords:

Detector
Silicon photonics
Electronic engineering
Engineering
BiCMOS
Photodetector
Silicon on insulator
Photonics
Transceiver
Electronics
Electrical engineering
Optoelectronics
Modulation

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