A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s
2013
This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
5
References
3
Citations
NaN
KQI