Characterization of /sup 28/Si/sup +/ implantation induced damage in SIMOX

Summary form only given. Damage induced by ion implantation in SIMOX (separation by implantation of oxygen) wafers is measured and compared with similar implants in bulk Si. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering data show that the implant amorphization threshold is >1E14 and >