Hanle-effect measurements of spin injection from Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}-contacts into degenerately doped Ge channels on Si
2014
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}/n{sup +}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
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