Semiconductor device comprising low dielectric material film and its production method

The present invention provides a low dielectric constant of the substrate other than silicon, the semiconductor device can be adapted to increase the operating speed. Provided by the substrate (11) and a low-dielectric material film (12) is lower than the dielectric constant of the silicon substrate (10) thereof. On the surface of the base (10), the semiconductor element layer by an adhesive comprising a MOS transistor (30) to laminate. MOS transistor (30) is formed with island-type single crystal Si film (31), embedded in the insulating film (15), (16), the interior (17). Forming a multilayer wiring structure (18) over the semiconductor element layer, is electrically connected to the MOS transistor (30). (10) is formed in the surface of the substrate functions as an electrode (20) signal return path function. (20) may also be alternatively formed on the base electrode (10), in the surface of the base body (10A) a plurality of electrodes (20A) of the base body (10A) configured as a plug-in selection means.