Optimizing thePerformance of

A numerical studyofcarbonnanotube field effect II.APPROACH transistors ispresented. Thenon-equilibrium Green's function Inthissection themodelsusedtostudy thestatic and formalism wasemployed toinvestigate thestatic response. Based d onthequasi-static approximation, thedynamic response hasbeen dynamic response ofCNTFETsareexplained. determined. Theeffect ofthegate-source andgate-drain spacersA.Static Response onthestatic anddynamicresponse ofthedevice wasstudied. Simulation results suggest thatboththedynamicandstatic BasedontheNEGF formalism we studied theeffect of characteristics ofthedevice canbeimproved byappropriately device geometry ontheperformance ofcarbon nanotube field- designing thegate-source andgate-drain spacers. effect transistors. We havesolved thecoupled system of transport andPoisson equations numerically. Duetoquantum