The case for intentional networking

PCT No. PCT/DE92/00598 Sec. 371 Date Feb. 7, 1994 Sec. 102(e) Date Feb. 7, 1994 PCT Filed Jul. 20, 1992 PCT Pub. No. WO93/04503 PCT Pub. Date Mar. 4, 1993.A process for the production of electroluminescent silicon structures, including: placing a silicon wafer in an acid bath; anodizing the silicon wafer in the acid bath using the apparatus of FIG. 2; illuminating the anode side of the silicon wafer during at least part of the time the silicon wafer is being placed in the acid bath and is being anodized; causing at least some areas of the monocrystalline silicon of the silicon wafer to be converted into a microporous silicon layer; and forming two contacts by means of which a voltage can be applied to the microporous silicon layer.