The physics of high-conductivity transparent materials based on wide-band zinc oxide

The properties of transparent conductive materials based on wide-gap zinc oxide semiconductors are considered, which are promising in their application to photovoltaics and liquid crystal displays. The impact of aluminum doping on the conductivity of thin ZnO films is examined. Temperature studies of the concentration, mobility, and resistivity in the temperature range of 77–300 K are conducted, revealing the metal conductivity of highly doped films. The electroactivity of aluminum as a donor impurity in the ZnO lattice is studied for thin films grown using atomic layer deposition on glass and silicone, containing 1–7 at. % aluminum. The reasons behind the low electroactivity of Al in ZnO are discussed, as are the methods for its enhancement.