High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory

Abstract NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si 2 H 6 as Si precursor and Ni as catalyst. A metal–oxide–semiconductor memory device with NiSi nanocrystal–Al 2 O 3 /SiO 2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperature of 85 °C were demonstrated.