Emission of terahertz radiation from GaN under impact ionization of donors in an electric field

The emission of terahertz radiation from epitaxial n-GaN layers in lateral electric field was found and studied for the first time. Radiation emission was observed in fields exceeding the impurity breakdown threshold. The highest -intensity radiation lines may be associated with intracenter electron transitions between donor levels (Si and O) and electron transitions from the conduction band to donor ground levels. Compact emitters of terahertz radiation operating at temperatures from 4 to 80 K can be created on the basis of n-GaN.