Performance Analysis of Charge Plasma Induced Graded Channel Si Nanotube

This paper investigates a comparison based on DC and AC analysis of a charge plasma-based graded channel nanotube in two configurations. Nanotube structures offer enhanced gate control over other devices, they offer higher on-current than nanowires of equivalent silicon film thickness, making them a promising device, however, the core gate of nanotube results in higher gate leakages also. This paper draws a comparison of the two possible configurations of making a graded channel without ion implantation. The results show that a gate of higher work function in S-GC-NTFET is necessary to bring the same subthreshold characteristics as D-GC-NTFET. The D configuration shows slightly enhanced DC characteristics however, the RF analysis shows better results for S configuration.