Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition
2009
We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of SbZn-2VZn complex.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
31
References
28
Citations
NaN
KQI