Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology

Abstract In this study, we survey Schottky diode property of both p-metal (Ni) germanide and n-metal (Zr, Er and Yb) germanide in contact with Ge (100). Our experimental results demonstrate that Φ p values obtained for NiGe/n-Ge is − 0.07 eV, and Φ n values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO 2 /TaN gate stack and AlN/SiO 2 stacked spacer were fabricated and measured. The drain current at V D  =  V G  −  V th  = − 1.5 V is ∼ 4.0 μA/μm of the gate length L G  = 8 μm device. The I on / I off ratio is ∼ 10 3 , and sub-threshold swing is 137 mV/dec.