Study on lateral ReRAM by the use of in-situ TEM

Lateral ReRAM (Resistive Random Access Memory) made of Cu/WO X /Cu was formed, and its operation was investigated in a transmission electron microscope (TEM) to elucidate the switching mechanism. Resistive switching behavior was realized in TEM. At the Set process changing the device state from high resistance state (HRS) to low resistance state (LRS), a Cu conductive filament grew up from the cathode. This filament was confirmed to be vanished at the reset process recovering HRS.