III-V Multiple-Gate Field-Effect Transistors With High-Mobility In 0.7 Ga 0.3 As Channel and Epi-Controlled Retrograde-Doped Fin

We report an In0.7Ga0.3As n-channel multiple- gate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel ef- fects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel poten- tial and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 μA/μm at VDS = 1.5 V and VGS − VT = 3V. Index Terms—FinFET, high mobility, InGaAs, MOSFET, multiple-gate field-effect transistor (MuGFET), retrograde well.