Amorphous silicon channel layer, thin film transistor and forming method of channel layer

The invention discloses an amorphous silicon channel layer for a thin film transistor, the thin film transistor and a forming method of the channel layer. The thin film transistor comprises the boron-doped amorphous silicon channel layer, wherein dark conductivity and electron excitation energy of the boron-doped amorphous silicon channel layer are lower than those of a boron-undoped amorphous silicon channel layer; the thin film transistor is an n-type thin film transistor. The thin film transistor comprises a gate electrode, the channel layer, a gate insulator layer, a source electrode and a drain electrode, wherein the gate electrode and the channel layer are configured on a substrate; the gate insulator layer is configured between the gate electrode and the channel layer; the source electrode and the drain electrode are respectively in contact with both sides of the channel layer. The amorphous silicon channel layer subjected to doping of trace boron compensates the like donor defects in an amorphous silicon material, reduces activation energy of the amorphous silicon material and increases barrier heights between the source and drain electrodes and the channel layer of the thin film transistor so as to reduce a leakage current of the thin film transistor; in the manufacturing process of the thin film transistor comprising the boron-doped amorphous silicon channel layer, a new mask does not need to be added and production equipment does not need to be changed.