Vertical and organic transistor production methods

The present invention relates to an organic transistor and a method for producing the vertical. Vertical organic transistor having an electrode on a substrate (121), the counter electrode (123) and disposed between the electrode layers are arranged (121) and the counter electrode (123), wherein the layer arrangement is formed of the following layers: a central electrode (122 ), which is implemented to allow the electric charge carrier passage through the central electrode (122), the electrical charge carrier injection from an electrode (121) disposed in the layer, such that electrical charge carriers can be injected from the electrode (121) disposed through the transport layer to the counter electrode; the organic layer (131), which is made of an organic semiconductor material, is disposed between the central electrode (122) and the electrode (121); another organic layer (132), which is made of an organic semiconductor material, , it is disposed between the central electrode (122) and the counter electrode (123); and a doped layer (141), which is disposed between the center electrode (122) and the electrode (121). The present invention further relates to a method for producing an organic vertical transistor.