A phase change memory GeSb yl-doped thin film material and its preparation method NITRIDE

The present invention discloses a phase change memory nitrogen doped nano-yl GeSb thin film material and its preparation method, chemical composition formula of (Ge10Sb90) xN1-x, where x = 0.50 ~ 0.90. The conventional material in comparison Ge2Sb2Te5 phase-change film, the present invention GeSb group nitrogen doped nano material thin film has a faster crystallization speed, can greatly enhance the speed of a PCRAM memory; GeSb yl further nitrogen doped nano crystal thin film material having a high temperature and activation energy, it is possible to greatly improve the stability of a PCRAM.