Preparation and characterization of MOCVD bismuth telluride thin films

Abstract The thermoelectric, electric and structural properties of Bi 2 Te 3 thin films grown by MOCVD have been investigated. The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129 μV/K when the carrier concentration increases from 9×10 19 to 3×10 20  cm −3 . For high substrate temperature, good orientation of crystallites has been observed which can be directly related to the best values of Seebeck coefficient found. Hall effect has been studied in the temperature range from 110 to 450 K. The temperature dependence of the Hall mobility is found to be T −1 indicating lattice scattering. The good quality of Bi 2 Te 3 thin films growth by MOCVD observed allow to confirm the high potential of these deposition method which can be turned to be suitable for growing thin films for thermoelectrical material production.