Electronic structure of InAsxP1-x/InP strained quantum wires

The electronic structure of InAs0.25P0.75/InP strained quantum wires grown on InP(001) oriented substrates is studied within the framework of effective-mass envelope-function theory. At the Γ point, the electron and valence subband energy levels with and without spin-split-off band, and the absorption spectra are calculated. The effects of strain and spin-split-off band on valence energy levels are presented. The results show that the uppermost valence subband is almost unaffected by the strain induced coupling between the heavy- and light-hole bands and the spin-split-off bands while the other subbands are more markedly affected in the InAs0.25P0.75/InP strained quantum wires.