Design of Triple Material Junctionless CG MOSFET

In this paper triple material CG junction-less MOSFET is analyzed for various parameters like drain current, surface potential, electric field and compared with junction based surrounding gate MOSFET. The overall performance comparison is made between multiple-material gate junction-less CG MOSFET and single-material gate junction-less CG MOSFET using 3-D ATLAS device simulator. Simulation results reveal that a multiple-material gate Junction-less transistor are more immune to the adverse affect of interface trap charges and significant enhancement towards ideal ON and OFF state behaviour, as compared to a Single material junction-less CG MOSFET. Therefore, it can be better utilized as a highly efficient linear RF integrated circuit design and wireless applications.