First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

In this paper we report on first InGaN-based light emitting structures grown by hydride vapour phase epitaxy (HVPE). InGaN layers and multi layer InGaN/InGaN epitaxial structures were grown on GaN/sapphire template substrates and characterized. InN content in the InGaN layers was varied from 5 to 35 mol.%. Thickness of InGaN layers was controlled from 10 nm to 2 microns. Density of treading dislocations in the InGaN layers was estimated to be in the 109 cm–2 range. X-ray diffraction measurements and transmission electron microscopy data confirmed a formation of InGaN/InGaN superlattice structures. Light emitting diode epitaxial wafers were fabricated by HVPE deposition of n-type InGaN layers and multi layer structures on p-type GaN template substrates. Depending on InN content in the InGaN light emitting regions, peak electroluminescence wavelength varied from 450 to 510 nm. Results of material characterization are reported. Advantages of the proposed upside down LED configuration and future applications of HVPE to grow InGaN layers and structures are discussed. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)