InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes

We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb2 and As2 fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450–320°C) which gives rise to the variation of the emission wavelength within the 3.6–4.0μm range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2, As2) and (Sb4, As4) is also presented.