Industrial prospects of Pb1 − xSnxTe:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range

Photoelectric properties of Pb1 − x Sn x Te:In films with composition x > 0.3 in the temperature range from 4.2 to 80 K have been investigated. High sample sensitivity to black-body radiation has been discovered at the temperature of helium, and as the temperature of the radiation source decreases the sensitivity increases, which can be connected with the optical-frequency transition in the short-wavelength infrared and terahertz spectral range. The detectivity value D* = 8.2 × 1016 cm · Hz1/2/W corresponding to the NEP = 3.1 × 10−18 W/Hz1/2, has been obtained at detector temperature 4.2 K and T BBR = 15 K.