Manufacturing method of a grave capacitor with an insulation collar, which is electrically connected on one side via a buried contact with a substrate

Manufacturing method of a grave capacitor having an isolation collar (10; 10a, 10b) in a substrate (1), via a buried contact (15a, 15b) on one side with the substrate (1) is electrically connected, in particular for a semiconductor memory cell having in the substrate (1) and provided over the buried contact (15a, 15b) connected to the planar select transistor, comprising the steps of: Providing a trench (5) in the substrate (1) using a hard mask (2, 3) with a corresponding mask aperture; Providing a Kondensatordielektikum (30) in the lower and medium grave area, the insulating collar (10) in the middle and upper grave area and an electrically conductive filling (20) at least until the upper surface of the insulation collar (10); completely filling the trench (5) with a filling material (50; 50 '; 50' '); Performing a grave STI fabrication process; Removing the filler material (50; 50 '; 50' '); Sinking of the insulation collar (10) in the upper grave region opposite the upper side (OS) of the substrate (1); Countersinking of the electrically conductive filling ...