The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt

The effect of tellurium diffusion from an n-GaSb:Te substrate on the transport and photoelectric properties of GaInAsSb solid solutions grown from lead-containing melt is investigated. The strongest influence observed for tellurium diffusion from the substrate is in 1-to 2-μm-thick epitaxial layers of solid solutions with low hole density and hole mobility. Under the illumination of these samples, a large photovoltage is observed in the spectral range of band-gap absorption.