Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe

Abstract A low-temperature Si 0.8 Ge 0.2 (LT-Si 0.8 Ge 0.2 ) interlayer was grown at 500°C to improve the relaxed Si 0.8 Ge 0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (RHEED) pattern from spotty to streaky and etch pits counts. For the same extent of strain, the threading dislocation density was reduced from 8×10 7  cm −2 in the latter to 2×10 6  cm −2 in the former.