Temporary Bonding Material Study for Room Temperature Mechanical Debonding with eWLB Wafer Application

The wafer thinning process and making backside redistribution layer (RDL) process were key technologies for assembling 2.5D and 3D IC the low profile device manufacturing. It was widely studied about temporary bonding material (TBM) for those advanced device packaging. The key issues here were void free, bonding, thermal resistance without having delamination and defect free cleaning after debonding. To minimize the cost effective 3D IC manufacturing, we have developed single layer temperature bonding material designed for room temperature mechanical debonding process. The materials have a high thermal resistance over 230 °C for 4 hours without having any void formation, delamination and no residue on the eWLB device after solvent cleaning.