Anomalous Hall effect in anatase Ti1−xCoxO2−δ at low temperature regime

2007 
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1−xCoxO2−δ thin film is studied from 10to300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity σAHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1−xCoxO2−δ also follows a scaling relationship to conductivity σxx as σAHE∝σxx1.6, which was observed for another polymorph rutile Ti1−xCoxO2−δ, suggesting an identical mechanism of their AHE.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    15
    References
    53
    Citations
    NaN
    KQI
    []