Influence of carrier escape mechanism on the operating wavelength of InGaN/GaN multiple quantum well solar cells

We fabricate d a series of InGaN/GaN multiple quantum well solar cells with indium content varying from 0.16 to 0.32 The emission wavelength s of the samples vary from 450 nm to 570 nm at forward current de nsity of 35A/cm 2 External q uantum efficiency measurement s indicate that the max imum operating wavelength of the series of solar cell s ends when the emission wavelengths approache 500 nm , though some of the samples have much longer absorption edges. To exp lain this phenomenon, we theor et ically analyze d the escape efficiency of photo generated carriers in the multiple quantum wells ( MQW). It was revealed that the carrier escape mechanism is the determining factor of maximu…