Mapping Detector Response Over the Area of a CdZnTe-Multiple-Electrode Detector

Semiconductor multiple-electrode detectors have been developed for the purpose of reducing effects of hole trapping in room-temperature radiation detectors. 1,2 Some reported geometries maintain a nearly-uniform electric field inside the detector, but others generate an electric field that is very non-uniform and highly-concentrated at the anode. This paper reports the results of mapping such a detector (having a non-uniform electric field) with a finely collimated gamma-ray beam to determine the detector response as a function of position.