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Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
2008
Rodríguez
Rémack
Gertas
Boku
Udayakumar
Summerfelt
Shinn
Haider
Madan
McAdams
Moise
Bailey
Eliason
Depner
Kim
Staubs
Keywords:
Electronic engineering
Materials science
stress measurement
cmos process
Capacitor
Reliability (semiconductor)
random access memory
characterization
Ferroelectricity
CMOS
Correction
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