Piezoelectric film, method for producing same, bimorph element, piezoelectric element, and method for producing same

The present invention addresses the problem of providing a film-like piezoelectric film having a film thickness of 5 µm or more. One embodiment of the present invention is a piezoelectric film that is a (Pb a La b )(Zr c Ti d Nb e )O 3-δ film having a film thickness of 5 µm or more and in which a, b, c, d, e, and δ satisfy formulas 1 and 11-16 indicated below. The (Pb a La b )(Zr c Ti d Nb e )O 3-δ film has a dielectric constant of 100-600 per µm of film thickness, and said piezoelectric film has least one of a coercive voltage of 3-15 V per µm of film thickness and a remanence value of 20-50 µC/cm 2 . Formula 1: 0 ≤ δ ≤ 1. Formula 11: 1.00 ≤ a + b ≤ 1.35. Formula 12: 0 ≤ b ≤ 0.8. Formula 13: 1.00 ≤ c + d + e ≤ 1.1. Formula 14: 0.4 ≤ c ≤ 0.7. Formula 15: 0.3 ≤ d ≤ 0.6. Formula 16: 0 ≤ e ≤ 0.1.