Influence of Hcl and H 2 on the Heteroepitaxial Growth of 3C-SiC Films on Si(100) Via Low-Temperature Chemical Vapor Deposition

The roles of HCl and H 2 on the low temperature epitaxial growth of 3C-SiC on Si (100) in the SiH 4 -C 2 H-HCl-H 2 system were examined. At a deposition temperature of 1000 °C with pure H 2 as the carrier gas, the deposition rate decreased by approximately 70%, and the structure of the films changed from randomly oriented polycrystals, to textured polycrystals, to single crystals as the Cl/Si gas input ratio was increased from 0 to 40. Without any HCl present, the deposition rate did not change when the H 2 carrier gas was replaced with up to 75% He. With a Cl/Si input ratio of 40, the growth rate decreased by approximately 70% as the He fraction was increased to 75%. Films deposited without HCl became more textured as H 2 was replaced with He, and single crystal films were produce with a 75% He - 25% H 2 mixture as the carrier gas. In contrast, with an input Cl/Si ratio of 40, all films were single crystal, but the rocking curve FWHM increased as H 2 was replaced with He.