Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

The SiC MOSFET device has superior characteristics such as high switch speed, lower switching loss etc. However, fast switching of SiC MOSFET generally brings severe switching ringing in the power circuit. In this paper, suppression switching ringing of SiC-MOSFET inverters with combined design of DC bus snubber and gate drive is presented. Root locus method is introduced to design the snubber parameters. The effect and limitation of gate drive design are discussed. Finally, the suppression effect of the combined design is investigated through experiment on SiC half-bridge and 6-in-1 SiC module testing boards.