Structure and Bonding in Nitrided Oxide Films by Sims and Xps

The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N 2 O, NO-O 2 and NH 3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si 3 bonding in the gas source films, N≡Si 3 and O-N-Si 2 bonding in the remote plasma sample, and N≡Si 3 , O-N≡Si 2 , and O 2 ≡N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O 2 ≡N-Si bonding is deepest in the sample whereas the O-N≡Si 2 bonding is associated with a surface oxide.