Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes

This paper presents results obtained using a Junction Photo‐Voltage (JPV) method optimized for characterization of the combined implant‐annealing process. The tool was found to be particularly suited to measurement of ultra‐shallow junction sheet resistivity and leakage. In this work the authors also evaluated the benefits of improved spatial resolution compared to previous equipment designs. Current technology USJ monitor wafers were made using a BF2 or Arsenic implant followed by a spike anneal and also R&D USJ wafers were made by Plasma Immersion followed by laser annealing. All the wafers were measured using the non‐contact JPV measurement tool. Results obtained from the JPV measurements were correlated to destructive off‐line analytical measurement tools.