Low-Energy Ion Implantation Over Single-Layer InAs/GaAs Quantum Dots

This chapter deals with the impact of both low-energy heavy ion (sulphur) and light ion (hydrogen) implantation over single-layer InAs/GaAs QDs. The material and structural properties of both un-implanted and implanted QDs are discussed, along with the results achieved through different characterizations. Sulphur (S−) ion implantation caused degradation of material quality whereas hydrogen (H−) ion implantation improved the material properties of InAs/GaAs QDs. The main purpose of this study was to optimize the particular ion and its energy and fluence range for experiencing the impact of ion implantation further on In(Ga)As/GaAs QD-based device structures as discussed in the following chapters.