SIMULATION BY MOLECULAR DYNAMICS OF THE TRAPPING OF CHARGE IN NON CONDUCTIVE MATERIALS

Charge trapping/detrapping phenomena in solid insulators (Magnesium oxide and sapphire) had been studied by the Dynamic molecular method. Simulations were performed to study punctual defects and trapping phenomena at the molecular scale. According to our model the first steps gave us some satisfied results about punctual defects and the model of simulating trapping seems to be encouraging.