The dependence of surface morphology of GaSb‐ and AlxGa1–xSb epitaxial layers on the conditions of LPE growth

The present work shows the dependence of surface morphology of the GaSb and AlxGa1–xSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 °C a supersaturation of 5—10 °C and a cooling rate of 0.24—0.4°C/min for GaSb epitaxial layers and 0.8—1.2 °C/min for AlxGa1–xSb epitaxial layers is necessary to obtain a flat and smooth surface. [Russian Text Ignore]