Hopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2 (RESEARCH NOTE)

The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we  found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.