Manufacturing method of a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell

Manufacturing method of a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell. DOLLAR A The present invention provides a manufacturing method for a grave capacitor having an isolation collar (10; 10a, 10b) in a substrate (1), via a buried contact (15a, 15b) on one side with the substrate (1) is electrically connected, in particular for a semiconductor memory cell having in the substrate (1) provided in and above the buried contact (15a, 15b) connected to the planar select transistor, comprising the steps of: providing a trench (5) in the substrate (1) using a hard mask (2, 3) with a corresponding mask aperture; Providing a capacitor dielectric (30) in the lower and medium grave area, the insulating collar (10) in the middle and upper grave area and an electrically conductive filling (20) at least until the upper surface of the insulation collar (10); completely filling the trench (5) with a filling material (50; 50 '; 50' '; 20); Performing a grave STI fabrication process; Removing the filler material (50; 50 '; 50' '; 20) and sinking of the electrically conductive filler (20) to below the upper surface of the insulation collar (10); Forming a unilateral isolation region (IS; IS1, IS2) to the substrate (1) above the insulation collar (10); Exposing a other side ...