Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALD

The deposition of ultra thin Ta(N) films by ALD is a possibility to achieve conformal film thickness and suitable step coverage for microelectronic applications. Due to the sorption of a precursor molecule to the substrate surface, the chemical interface conditions are important. In the present study selected substrate pretreatments were investigated by in situ XPS and spectroscopic ellipsometry in reference to the amount of carbon containing contamination and oxygen and in reference to the ALD growth rate of Ta(N) films. Furthermore, surface roughness was measured by AFM and will be discussed in dependence on the individual pretreatment and the ALD Ta(N) cycle number.