A process for producing a porous semiconducting film
2007
A process for preparing a porous semiconductor structure, characterized, that produced A. doped semi-metal particles, and then Example, from the obtained according to step A semi-metal particles, a dispersion is produced and then, C. a substrate is coated with the resulting dispersion after step B, and then D. the layer obtained after step C is treated with a solution of hydrogen fluoride in water, then E. the layer obtained after step D is thermally treated, wherein a porous semiconducting structure is obtained.
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