Modelling of the field effect in porous silicon

Thе paper theoretically investigates peculiarities of the field effect in porous silicon with spherical geometry of pores. By solving the Poisson’s equation it is obtained and analyzed coordinate dependences of the electrostatic potential for different values of pore radius and distance between pores. These dependencies can be described by the Debye screening length which is shown to decrease with increasing the curvature of pore surfaces. The field effect in porous silicon manifests itself in changing the total electrical conductivity and charging the near-surface capacitance.