Well-Balanced Carrier Mobilities in Ambipolar Transistors Based on Solution-Processable Low Band Gap Small Molecules

We synthesized a solution-processable low band gap small molecule, Si1TDPP-EE-COC6, for use as a semiconducting channel material in organic thin film transistors (OTFTs). The Si1TDPP-EE-COC6 is composed of electron-rich thiophene–dithienosilole–thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) and carbonyl units. SiTDPP-EE-COC6-based OTFTs with Au source/drain electrodes were fabricated, and their electrical properties were systematically investigated with increasing thermal annealing temperature. The hole and electron mobilities of as-spun Si1TDPP-EE-COC6 were 3.3 × 10–4 and 1.7 × 10–4 cm2 V–1 s–1, respectively. The carrier mobilities increased significantly upon thermal annealing at 150 °C, yielding a hole mobility of 0.003 cm2 V–1 s–1 and an electron mobility of 0.002 cm2 V–1 s–1. The performance enhancement upon thermal annealing was strongly associated with the formation of a layered edge-on structure and a reduction in the π–π intermolecular spacing. Importantly, the use of at...