High-efficiency blue and green laser diodes for laser displays

We present latest development results of GaN based high power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed blue LD showed the optical output power and the voltage of 5.25 W and 4.03 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the blue LD was 43.4% at 3A. And pure green LDs at 532 nm showed the optical output power of 1.19 W and the wall plug efficiency of 17.1 % at the forward current of 1.6A. Furthermore, 543 nm green LDs were fabricated on C-plane GaN substrates.